Infineon IPW65R110CFD 650V CoolMOS™ CFD7 Power Transistor: Datasheet, Application Circuit, and Features

The Infineon IPW65R110CFD is a state-of-the-art 650V superjunction MOSFET belonging to the revolutionary CoolMOS™ CFD7 family. This power transistor is engineered to deliver uncompromising efficiency and robustness in high-performance switched-mode power supplies (SMPS), industrial drives, and renewable energy systems. Its design represents a significant leap forward, combining ultra-low switching losses with superior ease of use.

Key Features and Benefits

The IPW65R110CFD is packed with innovative features that set it apart from conventional MOSFETs:

Ultra-Low On-State Resistance (RDS(on)): With a maximum RDS(on) of 110mΩ at a gate-source voltage of 10V, this device minimizes conduction losses, leading to cooler operation and higher system efficiency.

Integrated Fast Body Diode: A cornerstone of the CFD7 technology is the integrated fast recovery body diode. This feature drastically reduces reverse recovery charge (Qrr), making the MOSFET exceptionally resilient in hard-switching and bridge topologies. It effectively suppresses parasitic turn-on and enhances reliability.

Exceptional Switching Performance: The transistor exhibits very low gate charge (Qg) and low output capacitance (Coss). This enables faster switching frequencies, which allows for the design of smaller, more compact magnetic components and filters.

High Avalanche Ruggedness: The device is designed to withstand high energy pulses, providing excellent ruggedness and reliability in demanding environments where voltage spikes are common.

Typical Application Circuit

A common application for the IPW65R110CFD is in a Power Factor Correction (PFC) boost converter stage, a critical circuit in modern AC-DC power supplies. In this topology:

The MOSFET acts as the main switching element, controlled by a dedicated PFC controller IC.

The driver circuit, often an isolated gate driver, must supply sufficient current to quickly charge and discharge the low gate capacitance.

The integrated fast body diode is crucial here. During the dead time, the body diode conducts, and its low Qrr ensures minimal losses and voltage overshoot when it turns off, preventing circuit oscillations and stress on the switch.

A snubber network might be used across the drain and source to further dampen voltage ringing, although the inherent characteristics of the CFD7 technology reduce the need for extensive snubber circuits.

Datasheet Overview

The official datasheet is an essential resource for any design engineer. It provides comprehensive information, including:

Absolute Maximum Ratings: The boundaries for safe operation, such as drain-source voltage (VDS), continuous drain current (ID), and avalanche energy (EAS).

Electrical Characteristics: Detailed tables with parameters like RDS(on), gate threshold voltage (VGS(th)), and capacitance values (Ciss, Coss, Crss) under specific test conditions.

Switching Characteristics: Graphs and data on switching times, gate charge, and reverse recovery behavior.

Typical Performance Characteristics: A collection of graphs showing how parameters like RDS(on) and switching losses vary with temperature and current, which is vital for thermal management design.

ICGOOODFIND

The Infineon IPW65R110CFD CoolMOS™ CFD7 is a benchmark in high-voltage power switching. Its blend of extremely low RDS(on), the game-changing integrated fast body diode, and superior switching performance makes it an optimal choice for designers striving to achieve top-tier efficiency, power density, and system reliability in their next-generation power electronics products.

Keywords:

1. CoolMOS™ CFD7

2. Integrated Fast Body Diode

3. Low RDS(on)

4. High-Efficiency

5. Power Factor Correction (PFC)