Infineon BSC123N10LSG: High-Performance OptiMOS™ Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, achieving higher efficiency, power density, and reliability is paramount. The Infineon BSC123N10LSG stands out as a premier solution, embodying the advanced OptiMOS™ technology that has set a industry benchmark for power MOSFETs. This device is specifically engineered to meet the rigorous demands of switch-mode power supplies (SMPS), motor control, and a wide array of DC-DC conversion topologies.

A key strength of the BSC123N10LSG lies in its exceptional low on-state resistance (RDS(on)) of just 12.3 mΩ maximum. This ultra-low resistance is crucial for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. By dissipating less power as waste heat, designers can create more compact systems with smaller heatsinks or even pursue fanless designs, thereby enhancing reliability and lowering the total system cost.

Furthermore, this MOSFET boasts an impressive low gate charge (Qg). This characteristic is vital for achieving high-frequency switching operation. With lower switching losses, power supplies can operate at higher frequencies, allowing for the use of smaller passive components like inductors and capacitors. This directly contributes to increased power density, enabling the development of smaller and lighter end-products without compromising performance.

The device is rated for 100V drain-to-source voltage (VDS), making it an ideal choice for a broad spectrum of applications, including primary side switching in 48V input telecom and server power supplies, industrial power tools, and battery management systems. Its superior body diode robustness ensures safe operation during hard commutation events, a critical factor for motor drive and synchronous rectification circuits.

Packaged in the space-saving PG-TDSON-8, the BSC123N10LSG offers an excellent thermal performance and power dissipation capability. This package is designed for automated assembly processes, ensuring manufacturing efficiency and consistency.

ICGOOFind: The Infineon BSC123N10LSG OptiMOS™ Power MOSFET is a top-tier component that delivers a winning combination of ultra-low RDS(on), minimal switching losses, and superior thermal performance. It is an optimal choice for engineers focused on pushing the boundaries of efficiency and power density in their next-generation power conversion designs.

Keywords: OptiMOS™, Low RDS(on), High Efficiency, Power Density, DC-DC Conversion.