onsemi SGL160N60UFDTU 600V 160A IGBT with Ultrafast Diode

Release date:2026-07-03 Number of clicks:78

onsemi SGL160N60UFDTU: A High-Performance 600V, 160A IGBT Engineered for Demanding Applications

The onsemi SGL160N60UFDTU represents a significant advancement in IGBT (Insulated Gate Bipolar Transistor) technology, combining high power handling capabilities with enhanced switching efficiency. Designed for rugged industrial environments, this 600V, 160A IGBT integrates an ultrafast soft recovery diode, making it an ideal solution for high-power switching applications where reliability and performance are critical.

A key feature of this device is its low Vce(sat) saturation voltage, which minimizes conduction losses and improves overall system efficiency. This is particularly vital in applications like industrial motor drives, uninterruptible power supplies (UPS), and renewable energy inverters, where energy savings and thermal management are paramount. The co-packaged ultrafast diode further reduces switching losses and mitigates voltage overshoot during reverse recovery, leading to smoother operation and reduced electromagnetic interference (EMI).

The SGL160N60UFDTU utilizes onsemi's advanced trench field-stop technology, which ensures exceptional switching characteristics and short-circuit robustness. The module is also designed for easy parallelization, enabling its use in even higher power configurations without compromising stability. Its high current rating and voltage capability make it suitable for demanding high-frequency inverters and welding equipment.

Overall, the SGL160N60UFDTU stands out for its optimized trade-off between switching speed and low losses, providing designers with a component that enhances power density and reliability in next-generation power electronic systems.

ICGOOODFIND: The onsemi SGL160N60UFDTU is a high-efficiency, robust 600V/160A IGBT module with an integrated ultrafast diode, engineered to deliver superior performance in high-power industrial applications through reduced losses and improved switching behavior.

Keywords: IGBT, Ultrafast Diode, Low Vce(sat), High Power Switching, Industrial Motor Drives

Home
TELEPHONE CONSULTATION
Whatsapp
BOM RFQ